Power Field-Effect Transistors EOL Phase-Out

SCTW70N120G2V

Manufacturer: ST Micro

Power Field-Effect Transistor, 91A I(D), 1200V, 0.03ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Manufacturer Description: Silicon carbide Power MOSFET 1200 V, 91 A, 21 MILLI OHM typ., in an HiP247 package
Part Number: SCTW70N120G2V
Generic: SCTW70N120
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2018
Lifecycle Stage: Phase-Out
Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 200.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies SCTW70N120G2V from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 2338 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies.

Type Part Number Manufacturer
Manufacturer Suggested MSC025SMA120B Microchip
Pricing & Availability
2338 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Med

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