Power Field-Effect Transistors
Active
Mature
SCTW40N120G2VAG
Manufacturer: ST Micro
Power Field-Effect Transistor, 33A I(D), 1200V, 0.105ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Manufacturer Description:
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 MILLI OHM typ., 33 A in an HiP247 package
| Part Number: | SCTW40N120G2VAG |
|---|---|
| Generic: | SCTW40N120 |
| CAGE Code: | F8859, 50088, SCR76, 66958 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | May 2019 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 200.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- PFAS: NO
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
MSC080SMA120B
|
Microchip |
| Functional Equivalent |
SCTWA40N12G24AG
|
ST Micro |
Pricing & Availability
5180 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
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