Power Field-Effect Transistors Active Mature

SCT070W120G3-4AG

Manufacturer: ST Micro

Power Field-Effect Transistor, 30A I(D), 1200V, 0.087ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Manufacturer Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mohm typ., 30 A in an HiP247-4 package
Part Number: SCT070W120G3-4AG
Generic: SCT070W120G3
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: March 2023
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Operating Temperature: -55.0°C to 200.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
1645 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

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