Power Field-Effect Transistors Active Mature

IRF120

Manufacturer: Infineon

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Manufacturer Description: TO-3 N-CHANNEL HERMETIC PACKAGE MOS HEXFET
Part Number: IRF120
Generic: IRF120
CAGE Code: C6489, 4KYR2
NSN: 5961-01-168-6505
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 1987
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 2
Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies IRF120, sourced from SILICONIX. Inventory shown on this page reflects quantity on hand when available: 34 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

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Pricing & Availability
34 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

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