Power Field-Effect Transistors Active-Unconfirmed Decline

IRFY140

Manufacturer: Sensitron

Power Field-Effect Transistor

Manufacturer Description: HERMETIC POWER MOSFET N-CHANNEL
Part Number: IRFY140
Generic: IRFY140
CAGE Code: 13409
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: June 2017
Lifecycle Stage: Decline

Package Information

Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates IRFY140C Infineon
Functional Equivalent IRFY140C Infineon
Functional Equivalent IRFY140CM Infineon
Functional Equivalent IRFY140CMSCX Infineon
Functional Equivalent IRFY140CSCV Infineon
Functional Equivalent IRFY140CSCX Infineon
FFF Alternates IRFY140-JQR-B TT Electronics
Functional Equivalent IRFY140-JQR-B TT Electronics
FFF Alternates IRFY140-JQR-BR1 TT Electronics
Functional Equivalent IRFY140-JQR-BR1 TT Electronics
FFF Alternates IRFY140R1 TT Electronics
Functional Equivalent IRFY140R1 TT Electronics
Functional Equivalent IRFY140-T257 TT Electronics
Functional Equivalent IRFY540 TT Electronics
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic