Power Field-Effect Transistors NRFND Decline

UM6K1NTN

Manufacturer: Rohm

Power Field-Effect Transistor, 0.1A I(D), 30V, 8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 2.5V DRIVE NCH+NCH MOS FET
Part Number: UM6K1NTN
Generic: UM6K1
CAGE Code: S5518, 65940, SDH86, 0UST1
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 1998
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 6

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip