Power Field-Effect Transistors Active Mature

RQ3E180AJTB

Manufacturer: Rohm

Power Field-Effect Transistor, 18A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: NCH 30V 18A MIDDLE POWER MOSFET
Part Number: RQ3E180AJTB
Generic: RQ3E180
CAGE Code: S5518, 65940, SDH86, 0UST1
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: December 2014
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 5

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies RQ3E180AJTB, sourced from ROHM ELECTRONICS (UK) LTD. Inventory shown on this page reflects quantity on hand when available: 11548 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present.

Type Part Number Manufacturer
Functional Equivalent BSZ0904NSI Infineon
Functional Equivalent BSZ0904NSIATMA1 Infineon
Functional Equivalent BSZ0904NSIXT Infineon
Functional Equivalent RQ3E180GNTB Rohm
Pricing & Availability
11548 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic