Power Bipolar Transistors NRFND Decline

2SB1132T100R

Manufacturer: Rohm

Power Bipolar Transistor, 1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

Manufacturer Description: -32 V, -1 A MEDIUM POWER TRANSISTOR
Part Number: 2SB1132T100R
Generic: 2SB1132
CAGE Code: S5518, 65940, SDH86, 0UST1
Category: Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1994
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent 2SB1132 Secos
Functional Equivalent 2SB1132P Rohm
FFF Alternates 2SB1132R Rohm
Functional Equivalent 2SB1132R Rohm
Functional Equivalent 2SB798 Unisonic
Functional Equivalent FCX589 Diodes
Functional Equivalent FCX589TA Diodes
Functional Equivalent FCX591A Diodes
Functional Equivalent FCX591ATA Diodes
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Med
  • Environmental: High
  • Supply Chain: Med

Related Products

1075A

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon

Microsemi

1DI200Z-120

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

1DI300M-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Fuji Elec

1DI300Z-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec