RF Small Signal Field-Effect Transistors Discontinued

FPD200P70

Manufacturer: RF Micro

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Manufacturer Description: HIGH FREQUENCY PACKAGED PHEMT
Part Number: FPD200P70
Generic: FPD200
Category: RF Small Signal Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Lifecycle Stage: Discontinued

Package Information
Package Style: DISK BUTTON
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2N3819

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

Central Semi

2N3821

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, …

Microchip

2N3822

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF

Microchip

2N3823

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF

Microchip