Power Field-Effect Transistors NRFND Decline

HAT2165H

Manufacturer: Renesas

Power Field-Effect Transistor, 55A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: SILICON N CHANNEL POWER SWITCHING POWER MOS FET
Part Number: HAT2165H
Generic: HAT2165
CAGE Code: 6LTM0, 34371, 8QEK4, 4MHN3, JA033
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 2003
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 4

Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BSC020N03LSG Infineon
Functional Equivalent BSC030N03LSG Infineon
Functional Equivalent BSC042N03LSG Infineon
Functional Equivalent BSC042N03LSGATMA1 Infineon
Functional Equivalent BSC0909NS Infineon
Functional Equivalent BSC0909NSATMA1 Infineon
Functional Equivalent FDMS7670 Onsemi
Functional Equivalent STL140N4LLF5 ST Micro
Pricing & Availability
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

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