Power Field-Effect Transistors
NRFND
Decline
2SJ352
Manufacturer: Renesas
Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
SILICON P-CHANNEL MOS FET
| Part Number: | 2SJ352 |
|---|---|
| Generic: | 2SJ352 |
| CAGE Code: | 6LTM0, 34371, 8QEK4, 4MHN3, JA033 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | August 1997 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- REACH Compliant
- DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: High
- Supply Chain: Med-High