Insulated Gate Bipolar Transistors Discontinued

NXH350N100H4Q2F2S1G-R

Manufacturer: Onsemi

Insulated Gate Bipolar Transistor

Manufacturer Description: SI/SIC HYBRID MODULE - ELITESIC, I-TYPE NPC 1000 V, 350 A IGBT
Part Number: NXH350N100H4Q2F2S1G-R
Generic: NXH350N100
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: January 2022
Lifecycle Stage: Discontinued

Package Information

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies NXH350N100H4Q2F2S1G-R, sourced from ON SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 118 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
Functional Equivalent NXH350N100H4Q2F2P1G Onsemi
FFF Alternates NXH350N100H4Q2F2S1G Onsemi
Functional Equivalent NXH350N100H4Q2F2S1G Onsemi
Pricing & Availability
118 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Low
  • Supply Chain: Low-Med

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