Power Field-Effect Transistors Active Mature

NXH010P120MNF1PTG

Manufacturer: Onsemi

Power Field-Effect Transistor, 114A I(D), 1200V, 0.014ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Manufacturer Description: SILICON CARBIDE (SIC) MODULE - ELITESIC, 10 MILLI OHM SIC M1 MOSFET
Part Number: NXH010P120MNF1PTG
Generic: NXH010P120
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: November 2021
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 18
Operating Temperature: -40.0°C to 175.0°C
Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies NXH010P120MNF1PTG from ON SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 1406 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies.

Type Part Number Manufacturer
Functional Equivalent NXH010P120MNF1PG Onsemi
Functional Equivalent NXH010P120MNF1PNG Onsemi
Functional Equivalent NXH010P120MNF1PTNG Onsemi
Pricing & Availability
1406 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

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