Power Field-Effect Transistors Discontinued

NVMFD5873NLT1G

Manufacturer: Onsemi

Power Field-Effect Transistor, 10A I(D), 60V, 0.013ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 60 V, 58 A, 13 MILLI OHM DUAL N-CHANNEL LOGIC LEVEL, SO-8FL POWER MOSFET
Part Number: NVMFD5873NLT1G
Generic: NVMFD5873
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: February 2013
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 6

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested NVMFD5873NLWFT1G Onsemi
Manufacturer Suggested NVMFD5873NLWFT1G Microchip
Pricing & Availability
10500 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip