Power Field-Effect Transistors Discontinued

NTB6411ANT4G

Manufacturer: Onsemi

Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 100 V, 72 A, 14 MILLI OHM, N-CHANNEL POWER MOSFET
Part Number: NTB6411ANT4G
Generic: NTB6411
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2009
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent IRF540 NJ Semi
Functional Equivalent IRF540PBF Vishay
Functional Equivalent IRF542 NJ Semi
Manufacturer Suggested NTB6412ANT4G Onsemi
Functional Equivalent RSJ550N10TL Rohm
Functional Equivalent STD70N10F4 ST Micro
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic