Power Bipolar Transistors Active Decline

MJD350T4G

Manufacturer: Onsemi

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Manufacturer Description: High Voltage Power Transistor
Part Number: MJD350T4G
Generic: MJD350T4
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 1995
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates MJD350 ST Micro
Functional Equivalent MJD350 ST Micro
FFF Alternates MJD350-13 Diodes
Functional Equivalent MJD350-13 Diodes
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Related Products

1075A

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon

Microsemi

View Details
1DI200Z-120

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

View Details
1DI300M-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Fuji Elec

View Details
1DI300Z-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

View Details