Power Bipolar Transistors Active Decline

MJ11012G

Manufacturer: Onsemi

Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

Manufacturer Description: HIGH-CURRENT NPN SILICON TRANSISTOR
Part Number: MJ11012G
Generic: MJ11012
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
NSN: 5961-01-303-4841
Category: Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 1991
Lifecycle Stage: Decline

Package Information
Package Style: FLANGE MOUNT
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BDX69A TT Electronics
Functional Equivalent BDX69A.MOD TT Electronics
Functional Equivalent BDX69A.MODR1 TT Electronics
Functional Equivalent BDX69AR1 TT Electronics
Functional Equivalent BUX20.MOD TT Electronics
Functional Equivalent BUX20.MODR1 TT Electronics
Functional Equivalent BUX20R1 TT Electronics
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Related Products

1075A

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon

Microsemi

1DI200Z-120

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

1DI300M-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Fuji Elec

1DI300Z-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec