Insulated Gate Bipolar Transistors Discontinued

HGTP5N120BND

Manufacturer: Onsemi

Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB

Manufacturer Description: 21 A, 1200 V, NPT N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
Part Number: HGTP5N120BND
Generic: HGTP5N120
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2001
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies HGTP5N120BND, sourced from ON SEMICONDUCTOR. Inventory shown on this page reflects quantity on hand when available: 54648 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Pricing & Availability
54648 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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