Insulated Gate Bipolar Transistors
Discontinued
HGT1S10N120BNS
Manufacturer: Onsemi
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
Manufacturer Description:
35A, 1200V, NPT SERIES N-CHANNEL IGBT
| Part Number: | HGT1S10N120BNS |
|---|---|
| Generic: | HGT1S10N120 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Insulated Gate Bipolar Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | March 2001 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- PFAS: NO
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
HGT1S10N120BNST
|
Onsemi |
| Functional Equivalent |
HGT1S10N120BNST
|
Onsemi |
Pricing & Availability
800 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
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Risk Indicators
- Lifecycle: High
- Environmental: Med
- Supply Chain: Low
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