Power Field-Effect Transistors Discontinued

FQD2N80TM

Manufacturer: Onsemi

Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: 800 V, 1.8 A, 6.3 OHM N-CHANNEL QFET MOSFET
Part Number: FQD2N80TM
Generic: FQD2N80
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 2000
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested FQD3N60CTM-WS Onsemi
Manufacturer Suggested FQD3N60CTM-WS Microchip
Functional Equivalent STD3NK80Z-1 ST Micro
Functional Equivalent STD3NK80ZT4 ST Micro
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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