Power Field-Effect Transistors Discontinued

FQB8N60CTM

Manufacturer: Onsemi

Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 600 V N-CHANNEL MOSFET
Part Number: FQB8N60CTM
Generic: FQB8N60
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2003
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent 2SK3513-01S Fuji Elec
Functional Equivalent 2SK3930-01S Fuji Elec
Manufacturer Suggested FCB260N65S3 Onsemi
Manufacturer Suggested FCB260N65S3 Microchip
Functional Equivalent STB14NK60ZT4 ST Micro
Functional Equivalent STB4NK60ZT4 ST Micro
Functional Equivalent STB6NK60ZT4 ST Micro
Functional Equivalent STB9NK60ZT4 ST Micro
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Low

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