Power Field-Effect Transistors NRFND Decline

FDS6680A

Manufacturer: Onsemi

Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: SINGLE N-CHANNEL, LOGIC LEVEL, POWERTRENCH MOSFET
Part Number: FDS6680A
Generic: FDS6680
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1998
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD17579Q3A TI
Functional Equivalent FDMS7694 Onsemi
Manufacturer Suggested FDS6680AS Onsemi
Functional Equivalent IRF8714TRPBF Infineon
FFF Alternates MDS1654URH Magnachip
Functional Equivalent MDS1654URH Magnachip
FFF Alternates UPC8026G-S08-R Unisonic
Functional Equivalent UPC8026G-S08-R Unisonic
Pricing & Availability
11649 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Low

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