Power Field-Effect Transistors
NRFND
Decline
FDMS3662
Manufacturer: Onsemi
Power Field-Effect Transistor, 8.9A I(D), 100V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
N-CHANNEL POWER TRENCH MOSFET
| Part Number: | FDMS3662 |
|---|---|
| Generic: | FDMS3662 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | April 2008 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 5 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSC160N10NS3G
|
Infineon |
| Functional Equivalent |
BSC160N10NS3GATMA1
|
Infineon |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low-Med