FDMS039N08B
Manufacturer: Onsemi
Power Field-Effect Transistor, 100A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
| Part Number: | FDMS039N08B |
|---|---|
| Generic: | FDMS039N08 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | September 2011 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
934066332118
|
Nexperia |
| Functional Equivalent |
CSD19502Q5B
|
TI |
| Functional Equivalent |
CSD19502Q5BT
|
TI |
| Functional Equivalent |
FDD86367
|
Onsemi |
| Functional Equivalent |
FDD86367-F085
|
Onsemi |
| Functional Equivalent |
IAUC100N08S5N043
|
Infineon |
| Functional Equivalent |
IAUC100N08S5N043ATMA1
|
Infineon |
| Functional Equivalent |
IPD046N08N5
|
Infineon |
| Functional Equivalent |
IPD046N08N5ATMA1
|
Infineon |
| Functional Equivalent |
MCAC100N08Y
|
MCC |
| Functional Equivalent |
MCAC100N08Y-TP
|
MCC |
| Functional Equivalent |
NVMFWS4D5N08XT1G
|
Onsemi |
| Functional Equivalent |
PSMN4R4-80BS
|
118 |
| Functional Equivalent |
PSMN4R4-80BS
|
Nexperia |
| Functional Equivalent |
SSFP8974
|
Good Ark |
| Functional Equivalent |
STH145N8F7-2AG
|
ST Micro |
| Functional Equivalent |
STTFSSC5D2N08HLTWG
|
Onsemi |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic