Power Field-Effect Transistors Discontinued

FDD24AN06LA0-F085

Manufacturer: Onsemi

Power Field-Effect Transistor, 7.1A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Manufacturer Description: N-CHANNEL LOGIC LEVEL POWER TRENCH MOSFET 60V, 36A, 24MILLI OHM
Part Number: FDD24AN06LA0-F085
Generic: FDD24AN06LA0
CAGE Code: 1MQ07, 59PE1, 9CDY7, 9KJZ2
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
DLA Qualification: Not Qualified
Date of Introduction: February 2009
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD18543Q3A TI
Manufacturer Suggested NVD5C684NLT4G Onsemi
Manufacturer Suggested NVD5C684NLT4G Microchip
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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