Power Field-Effect Transistors
NRFND
Decline
FDB047N10
Manufacturer: Onsemi
Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Description:
100 V, 164 A, 4.7 MILLI OHM N-CHANNEL POWERTRENCH MOSFET
| Part Number: | FDB047N10 |
|---|---|
| Generic: | FDB047N10 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | August 2008 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD19532KTT
|
TI |
| Functional Equivalent |
IPB120N10S4-05
|
Infineon |
| Functional Equivalent |
IPB120N10S405ATMA1
|
Infineon |
| Functional Equivalent |
IRFB4110PBF
|
Infineon |
| Functional Equivalent |
PSMN4R8-100BSE
|
Nexperia |
| Functional Equivalent |
PSMN4R8-100BSEJ
|
Nexperia |
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates.
Contact us
or use Request Quote below.
Contact us for pricing and availability.
Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: Low-Med