Power Field-Effect Transistors
Active
Mature
FDB035N10A
Manufacturer: Onsemi
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Description:
100 V, 214 A, 3.5 MILLI OHM N-CHANNEL POWERTRENCH MOSFET
| Part Number: | FDB035N10A |
|---|---|
| Generic: | FDB035N10 |
| CAGE Code: | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | March 2011 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD19535KTT
|
TI |
Pricing & Availability
42462 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
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