RF Power Field-Effect Transistors Discontinued

A2G22S251-01SR3

Manufacturer: NXP

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: RF POWER GAN TRANSISTOR
Part Number: A2G22S251-01SR3
Generic: A2G22S251
CAGE Code: H1R01, H0H68, H1V34
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2016
Lifecycle Stage: Discontinued
Package Information
Package Style: FLATPACK
Terminals: 2
Operating Temperature: -55.0°C to 225.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
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Risk Indicators
  • Lifecycle: High
  • Environmental: Low

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