Power Field-Effect Transistors Active Mature

PSMN1R0-40YLDX

Manufacturer: Nexperia

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL 40 V 1.1 MILLI OHMS LOGIC LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY
Part Number: PSMN1R0-40YLDX
Generic: PSMN1R0
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: July 2013
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested CSD18510Q5B TI
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip