PSMN0R7-25YLDX
Manufacturer: Nexperia
Power Field-Effect Transistor, 300A I(D), 25V, 0.00092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | PSMN0R7-25YLDX |
|---|---|
| Generic: | PSMN0R7 |
| CAGE Code: | H2HX9 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | March 2017 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 4 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies PSMN0R7-25YLDX, sourced from NEXPERIA. Inventory shown on this page reflects quantity on hand when available: 19126 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
934069083115
|
Nexperia |
| Manufacturer Suggested |
CSD16570Q5B
|
TI |
| Manufacturer Suggested |
CSD17573Q5B
|
TI |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low-Med
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic