Power Field-Effect Transistors NRFND Decline

PMV25ENEAR

Manufacturer: Nexperia

Power Field-Effect Transistor, 5.5A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-236AB

Manufacturer Description: 30 V, N-channel Trench MOSFET
Part Number: PMV25ENEAR
Generic: PMV25
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: February 2017
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies PMV25ENEAR, sourced from NEXPERIA. Inventory shown on this page reflects quantity on hand when available: 30381 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Pricing & Availability
30381 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic