Power Field-Effect Transistors
NRFND
Decline
PMV213SN
Manufacturer: Nexperia
Power Field-Effect Transistor, 1.9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Manufacturer Description:
N-channel TrenchMOS standard level FET
| Part Number: | PMV213SN |
|---|---|
| Generic: | PMV213 |
| CAGE Code: | H2HX9 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | September 2002 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSP373N
|
Infineon |
| Functional Equivalent |
BSP373NH6327
|
Infineon |
| Functional Equivalent |
BSP373NH6327XTSA1
|
Infineon |
| Manufacturer Suggested |
CSD19538Q2
|
TI |
| Functional Equivalent |
IRFL110TRPBF
|
Vishay |
| Functional Equivalent |
IRFL4310
|
Infineon |
| Functional Equivalent |
IRFL4310TRPBF
|
Infineon |
| Functional Equivalent |
SIHFL110
|
Vishay |
| Functional Equivalent |
SIHFL110-E3
|
Vishay |
| Functional Equivalent |
SIHFL110-GE3
|
Vishay |
| Functional Equivalent |
SIHFL110T
|
Vishay |
| Functional Equivalent |
SIHFL110TR-GE3
|
Vishay |
| Functional Equivalent |
STN2NF10
|
ST Micro |
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates.
Contact us
or use Request Quote below.
Contact us for pricing and availability.
Risk Indicators
- Lifecycle: Med
- Environmental: Low
- Supply Chain: Med-High