Power Field-Effect Transistors Active Decline

NX3008PBK,215

Manufacturer: Nexperia

Power Field-Effect Transistor, 0.23A I(D), 30V, 4.1ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236AB

Manufacturer Description: 30 V, 230 MILLI AMP P-CHANNEL TRENCH MOSFET
Part Number: NX3008PBK,215
Generic: NX3008
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: August 2011
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip