Power Bipolar Transistors Active Decline

MJD32C

Manufacturer: Nexperia

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Manufacturer Description: 100 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR
Part Number: MJD32C
Generic: MJD32
CAGE Code: H2HX9
Category: Power Bipolar Transistors
Part Type: Transistors
Date of Introduction: May 2019
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Active Manufacturers CDIL SGS89
Active Manufacturers Galaxy Semi N/A
Active Manufacturers MCC 374W0
Active Manufacturers Secos N/A
Active Manufacturers Taitron 1LBC3
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Need help? Email sales or call (800) 701-8152.

Related Products

1075A

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon

Microsemi

1DI200Z-120

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

1DI300M-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Fuji Elec

1DI300Z-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec