Power Field-Effect Transistors Active Decline

BSS84AKM,315

Manufacturer: Nexperia

Power Field-Effect Transistor, 0.23A I(D), 50V, 8.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 50 V, 230 MILLI AMP P-CHANNEL TRENCH MOSFET
Part Number: BSS84AKM,315
Generic: BSS84
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2011
Lifecycle Stage: Decline

Package Information
Package Style: CHIP CARRIER
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BSS84AKM Nexperia
Functional Equivalent BSS84AKMB 315
Functional Equivalent BSS84AKMB Nexperia
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip