Power Field-Effect Transistors Active Decline

BSS138P,215

Manufacturer: Nexperia

Power Field-Effect Transistor, 0.36A I(D), 60V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: 60 V, 360 MILLI AMP N-CHANNEL TRENCH MOSFET
Part Number: BSS138P,215
Generic: BSS138
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: November 2010
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates BSS138P Nexperia
FFF Alternates BSS138P Galaxy Semi
Functional Equivalent BSS138P Nexperia
Functional Equivalent BSS138P Galaxy Semi
Manufacturer Suggested CSD18541F5 TI
Pricing & Availability
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

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