Power Field-Effect Transistors NRFND Decline

BSP225

Manufacturer: Nexperia

Power Field-Effect Transistor

Manufacturer Description: P-channel enhancement mode vertical D-MOS transistor
Part Number: BSP225
Generic: BSP225
CAGE Code: H2HX9
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2000
Lifecycle Stage: Decline

Package Information

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip