Power Field-Effect Transistors Discontinued

G2R1000MT33J

Manufacturer: Navitas

Power Field-Effect Transistor, 4A I(D), 3300V, 1.2ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263

Manufacturer Description: 3300 V 1000 MILLI OHM SIC MOSFET
Part Number: G2R1000MT33J
Generic: G2R1000
CAGE Code: 9NHY6, 9WKF5
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: May 2020
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 7
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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