Power Field-Effect Transistors
Active
Mature
G2R1000MT33J
Manufacturer: Navitas
Power Field-Effect Transistor, 4A I(D), 3300V, 1.2ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263
Manufacturer Description:
3300 V 1000 MILLI OHM SIC MOSFET
| Part Number: | G2R1000MT33J |
|---|---|
| Generic: | G2R1000 |
| CAGE Code: | 9NHY6, 9WKF5 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | May 2020 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 7 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Low
- Supply Chain: Med
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