Insulated Gate Bipolar Transistors Active Mature

APT15GN120SDQ1G

Manufacturer: Microchip

Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel

Manufacturer Description: 1200 V IGBT
Part Number: APT15GN120SDQ1G
Generic: APT15GN120
CAGE Code: 60991, FA8G0, 0HSW3, 0J4Z0
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: October 2005
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies APT15GN120SDQ1G from MICROSEMI. Inventory shown on this page reflects quantity on hand when available: 345 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.

Type Part Number Manufacturer
FFF Alternates APT15GN120SDQ1 Microchip
Functional Equivalent APT15GN120SDQ1 Microchip
Functional Equivalent APT20GF120SRDQ1 Microchip
Functional Equivalent IXDT30N120AU1 Littelfuse
Functional Equivalent IXGT15N120B2D1 Littelfuse
Functional Equivalent IXGT28N120BD1 Littelfuse
Pricing & Availability
345 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec