Power Bipolar Transistors Active Decline

JANSR2N3439L

Manufacturer: Microchip

Power Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin

Manufacturer Description: RADIATION HARDENED NPN LOW POWER SILICON TRANSISTOR
Part Number: JANSR2N3439L
Generic: 2N3439
CAGE Code: 60991, FA8G0, 0HSW3, 0J4Z0
Category: Power Bipolar Transistors
Part Type: Transistors
Qualifications: DLA, Space
DLA Qualification: Qualified
Date of Introduction: March 2008
Lifecycle Stage: Decline

Package Information
Package Style: CYLINDRICAL
Terminals: 3
Operating Temperature: -65.0°C to 200.0°C

Compliance & Certifications
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies JANSR2N3439L, sourced from MICROSS. Inventory shown on this page reflects quantity on hand when available: 657 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
Active Manufacturers DLA 1X7M5
Pricing & Availability
657 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: High

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