Power Field-Effect Transistors Active Mature

APT50M85JVR

Manufacturer: Microchip

Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 500 V, 50 A, 0.085 OHM POWER MOS V
Part Number: APT50M85JVR
Generic: APT50M85
CAGE Code: 60991, FA8G0, 0HSW3, 0J4Z0
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: UL
DLA Qualification: Not Qualified
Date of Introduction: October 1996
Lifecycle Stage: Mature
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent APT50M75JFLL Microchip
Functional Equivalent APT50M75JLL Microchip
Functional Equivalent APT50M75JLLU2 Microchip
Functional Equivalent APT50M75JLLU3 Microchip
FFF Alternates APT50M85JVFR Microchip
Functional Equivalent APT50M85JVFR Microchip
FFF Alternates APT50M85JVFRE3 Microchip
Functional Equivalent APT50M85JVFRE3 Microchip
FFF Alternates APT50M85JVRE3 Microchip
Functional Equivalent APT50M85JVRE3 Microchip
Functional Equivalent STE48NM50 ST Micro
Pricing & Availability
29 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details