Power Field-Effect Transistors Active Mature

APT50M75B2LLG

Manufacturer: Microchip

Power Field-Effect Transistor, 57A I(D), 500V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: POWER MOS 7 MOSFET
Part Number: APT50M75B2LLG
Generic: APT50M75
CAGE Code: 60991, FA8G0, 0HSW3, 0J4Z0
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2001
Lifecycle Stage: Mature
Package Information
Package Style: IN-LINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent APL502L Microchip
Functional Equivalent APL502LG Microchip
FFF Alternates APT50M75B2FLL Microchip
Functional Equivalent APT50M75B2FLL Microchip
FFF Alternates APT50M75B2FLLG Microchip
Functional Equivalent APT50M75B2FLLG Microchip
FFF Alternates APT50M75B2LL Microchip
Functional Equivalent APT50M75B2LL Microchip
Functional Equivalent APT50M80LVFR Microchip
Functional Equivalent APT50M80LVFRG Microchip
Functional Equivalent IXFX1806 Littelfuse
Pricing & Availability
181 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details