Power Field-Effect Transistors Active Mature

APT1001RBVR

Manufacturer: Microchip

Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Manufacturer Description: 1000 VOLT 11 AMP 1.000 OHM POWER MOS V
Part Number: APT1001RBVR
Generic: APT1001
CAGE Code: 60991, FA8G0, 0HSW3, 0J4Z0
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 1996
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates APT1001RBVFR Microchip
Functional Equivalent APT1001RBVFR Microchip
FFF Alternates APT1001RBVFRG Microchip
Functional Equivalent APT1001RBVFRG Microchip
FFF Alternates APT1001RBVRG Microchip
Functional Equivalent APT1001RBVRG Microchip
Functional Equivalent APT10086BVFR Microchip
Functional Equivalent APT10086BVFRG Microchip
Functional Equivalent APT10086BVR Microchip
Functional Equivalent APT10086BVRG Microchip
Functional Equivalent IXFH12N90P Littelfuse
Functional Equivalent IXFX12N90Q Littelfuse
Functional Equivalent SHD2396F Sensitron
Functional Equivalent SHD2396FS Sensitron
Functional Equivalent SHD2397F Sensitron
Functional Equivalent SHD2397FS Sensitron
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip