Power Bipolar Transistors Active Decline

MJD122-TP

Manufacturer: MCC

Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

Manufacturer Description: NPN SILICON EPITAXIAL PLANER TRANSISTOR
Part Number: MJD122-TP
Generic: MJD122
CAGE Code: 374W0
Category: Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2007
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates MJD122 MCC
Functional Equivalent MJD122 MCC
FFF Alternates MJD122G Onsemi
Functional Equivalent MJD122G Onsemi
FFF Alternates MJD122T4 ST Micro
Functional Equivalent MJD122T4 ST Micro
FFF Alternates MJD122T4G Onsemi
Functional Equivalent MJD122T4G Onsemi
FFF Alternates NJVMJD122T4G Onsemi
Functional Equivalent NJVMJD122T4G Onsemi
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med

Related Products

1075A

Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon

Microsemi

1DI200Z-120

Power Bipolar Transistor, 200A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec

1DI300M-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin

Fuji Elec

1DI300Z-120

Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon

Fuji Elec