RF Power Bipolar Transistors Active Decline

PH2856-160

Manufacturer: M/A-com Tech

RF Power Bipolar Transistor, 1-Element, S Band, Silicon, NPN

Manufacturer Description: 160 W, 2.856 GHZ, 12 MICRO SECOND PULSE, 10 PERCENTAGE DUTY RADAR PULSED POWER TRANSISTOR
Part Number: PH2856-160
Generic: PH2856160
CAGE Code: 55NN2, 50998
Category: RF Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1995
Lifecycle Stage: Decline

Package Information
Package Style: FLANGE MOUNT
Terminals: 2

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

0912-7

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN

Microsemi

2N3375

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60

ASI

2N3866

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39

Microchip

2N5641

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

ASI