IXTH200N10T
Manufacturer: Littelfuse
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
| Part Number: | IXTH200N10T |
|---|---|
| Generic: | IXTH200N10 |
| CAGE Code: | 75915 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | September 2018 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
CSD19532KTT
|
TI |
| Functional Equivalent |
CSD19532KTTT
|
TI |
| Functional Equivalent |
IXFA180N10T2
|
Littelfuse |
| Functional Equivalent |
IXFP180N10T2
|
Littelfuse |
| Functional Equivalent |
IXTQ200N10T
|
Littelfuse |
| Functional Equivalent |
SSF1006A
|
Good Ark |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med-High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic