Power Field-Effect Transistors Active Mature

IXFQ50N60P3

Manufacturer: Littelfuse

Power Field-Effect Transistor, 50A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: Polar3 HiperFET Power MOSFET
Part Number: IXFQ50N60P3
Generic: IXFQ50N60
CAGE Code: 75915
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: September 2018
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies IXFQ50N60P3, sourced from LITTELFUSE. Inventory shown on this page reflects quantity on hand when available: 1863 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
Functional Equivalent APT56F60B2 Microchip
Functional Equivalent APT56F60L Microchip
Functional Equivalent APT56M60B2 Microchip
Functional Equivalent APT56M60L Microchip
Functional Equivalent IXFH50N60P3 Littelfuse
Functional Equivalent IXFT50N60P3 Littelfuse
Functional Equivalent IXFX48N60Q3 Littelfuse
Pricing & Availability
1863 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic