IXFN20N120P
Manufacturer: Littelfuse
Power Field-Effect Transistor, 20A I(D), 1200V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | IXFN20N120P |
|---|---|
| Generic: | IXFN20N120 |
| CAGE Code: | 75915 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | UL |
|---|---|
| DLA Qualification: | Not Qualified |
| Date of Introduction: | June 2008 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 4 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies IXFN20N120P, sourced from IXYS. Inventory shown on this page reflects quantity on hand when available: 86 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
APT12057JFLL
|
Microchip |
| Functional Equivalent |
APT12057JLL
|
Microchip |
| Functional Equivalent |
APT17F120J
|
Microchip |
| Functional Equivalent |
APT19M120J
|
Microchip |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med-High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic