IXFA10N60P
Manufacturer: Littelfuse
Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
| Part Number: | IXFA10N60P |
|---|---|
| Generic: | IXFA10N60 |
| CAGE Code: | 75915 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | September 2005 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
| Operating Temperature: | -55.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- PFAS: NO
- DRC Status: DRC Conflict Free
Abacus Technologies supplies IXFA10N60P, sourced from LITTELFUSE. Inventory shown on this page reflects quantity on hand when available: 648 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
IXFP10N60P
|
Littelfuse |
| Functional Equivalent |
IXTA10N60P
|
Littelfuse |
| Functional Equivalent |
IXTI10N60P
|
Littelfuse |
| Functional Equivalent |
IXTP10N60P
|
Littelfuse |
| Functional Equivalent |
PHP10N60E127
|
NXP |
Pricing & Availability
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic