Insulated Gate Bipolar Transistors Discontinued

IXBH20N360HV

Manufacturer: Littelfuse

Insulated Gate Bipolar Transistor, 70A I(C), 3600V V(BR)CES, N-Channel, TO-247

Manufacturer Description: HIGH VOLTAGE, HIGH GAIN BIMOSFET MONOLITHIC BIPOLAR MOS TRANSISTOR
Part Number: IXBH20N360HV
Generic: IXBH20N360
CAGE Code: 75915
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: September 2018
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies IXBH20N360HV, sourced from LITTELFUSE. Inventory shown on this page reflects quantity on hand when available: 2373 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Pricing & Availability
2373 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: High

Need help? Email sales or call (800) 701-8152.

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec